Study on cobalt salicide on patterned wafers with 0.13μm CMOS technology and below

Author

Qin, Deng ; Zhihong, Mai ; Ran, He ; Jeffrey, Lam ; Ramesh, Rao ; Kun, Li

Author_Institution

Technol. Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore

fYear

2005

fDate

27 June-1 July 2005

Firstpage

176

Lastpage

180

Abstract

In 0.11 μm CMOS technology development, undesired cobalt salicide was found to be the cause of severe yield loss. Cobalt salicide was delaminated due to both the mechanical stress on active/shallow trench isolation (STI) and the improper cobalt salicidation. This paper presents detailed analysis of failure mechanism. X-ray diffraction (XRD) was used for the analysis of cobalt salicide on patterned wafers to determine whether the CoSi₂ phase is present or not. Our experimental results showed that this method could be used for the analysis of cobalt salicide on patterned wafers.

Keywords

CMOS integrated circuits; X-ray diffraction; cobalt compounds; delamination; failure analysis; integrated circuit yield; isolation technology; materials testing; 0.11 micron; 0.13 micron; CMOS technology; CoSi₂; X-ray diffraction; cobalt salicidation; cobalt salicide; delamination; failure mechanism analysis; mechanical stress; patterned wafers; shallow trench isolation; yield loss; CMOS technology; Cobalt; Failure analysis; Pattern analysis; Scanning electron microscopy; Silicidation; Silicides; Silicon; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469156

Filename

1469156