Title :
Semiconductor PN junction failure at operation near or in the breakdown region of the reverse I-V characteristic
Author :
Obreja, V.V.N. ; Codreanu, C. ; Poenar, D. ; Buiu, O.
Author_Institution :
National R & D Inst. for Microtechnology, Bucharest, Romania
fDate :
27 June-1 July 2005
Abstract :
The aim of the paper is to provide experimental results and analysis relating to the failure mechanism of the junction at operation near or in the breakdown region of electrical characteristic.
Keywords :
failure analysis; fault diagnosis; p-n junctions; semiconductor device breakdown; breakdown region; electric breakdown; failure analysis; semiconductor PN junction; Charge carrier lifetime; Electric breakdown; Electric variables; Failure analysis; Leakage current; Rectifiers; Semiconductor device breakdown; Semiconductor diodes; Thyristors; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469161
