Title :
Investigation and application of SEM dopant contrast on cross-section
Author :
Li-Lung, Lai ; Min, Wu
Author_Institution :
Semicond. Manuf. Int. (Beijing) Corp., Beijing, China
fDate :
27 June-1 July 2005
Abstract :
The dopant profile of semiconductor device could be inspected by several known techniques. However, they are not useful or acceptable for physical failure analysis (PFA) to sample with product pattern for low yield analysis due to lack of high spatial resolution. Therefore, SEM dopant contrast is studied for further application.
Keywords :
doping profiles; failure analysis; inspection; scanning electron microscopy; semiconductor device testing; specimen preparation; PFA; SEM dopant contrast; dopant profile; low yield analysis; physical failure analysis; product pattern; semiconductor device; spatial resolution; Doping profiles; Failure analysis; Holography; Scanning electron microscopy; Semiconductor device doping; Semiconductor device manufacture; Semiconductor devices; Spatial resolution; Virtual colonoscopy; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469168
