Title :
A review of near infrared photon emission microscopy and spectroscopy
Author :
Phang, J.C.H. ; Chan, D.S.H. ; Tan, S.L. ; Len, W.B. ; Yim, K.H. ; Koh, L.S. ; Chua, C.M. ; Balk, L.J.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Singapore Nat. Univ., Singapore
fDate :
27 June-1 July 2005
Abstract :
Near infrared photon emission microscopy is an established fault localization technique for microelectronic failure analysis. Near infrared photon spectroscopy has the potential to become a useful defect characterization technique. In this paper, near infrared photon emission microscopy and spectroscopy are reviewed together with the instrumentation developments that allow these techniques to be effectively deployed for microelectronic failure analysis. The measurement results from pn junctions and saturated MOSFETs are correlated with the various photon emission mechanisms. Additional information that can be obtained from NIR systems over visible systems are also presented.
Keywords :
MOSFET; failure analysis; fault diagnosis; infrared spectroscopy; optical microscopy; p-n junctions; semiconductor device measurement; semiconductor device reliability; MOSFET; defect characterization technique; fault diagnosis; fault localization technique; microelectronic failure analysis; near infrared photon emission microscopy; near infrared spectroscopy; optical microscopy; pn junctions; semiconductor device measurement; semiconductor device reliability; Circuit faults; Electron emission; Failure analysis; Infrared spectra; Microelectronics; Microscopy; Photonic band gap; Photonic integrated circuits; Silicon; Spectroscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469178
