Evaluation of the strain state in SiGe/Si heterostructures by high resolution x-ray diffraction and convergent beam electron diffraction

Author

Toh, Suey Li ; Li, K. ; Ang, C.H. ; Rao, R. ; Er, E. ; Loh, K.P. ; Boothroyd, C.B. ; Chan, L.

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

fYear

2005

fDate

27 June-1 July 2005

Firstpage

302

Lastpage

305

Abstract

We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

Keywords

Ge-Si alloys; X-ray diffraction; electron diffraction; interface structure; semiconductor heterojunctions; silicon; CBED; HOLZ reflection; HRXRD; SiGe-Si; SiGe/Si heterostructures; convergent beam electron diffraction; graded layer; high resolution x-ray diffraction; higher order Laue zone; interfacial strain phenomena; relaxation mechanism; Capacitive sensors; Electron beams; Erbium; Germanium silicon alloys; Lattices; Pattern analysis; Silicon germanium; Strain measurement; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469184

Filename

1469184