Dramatically enhanced performance of recessed SiGe source-drain PMOS by in-situ etch and regrowth technique (InSERT)

A novel mass-production-worthy in-situ etch and regrowth technique (InSERT) for recessed SiGe source-drain (SD) PMOS is introduced. The unique source drain extension (SDE) recess results in high drive current (ion) gains of 35 and 38% for shallow recess depths of 30 and 40nm, respectively, while keeping Vth and off leakage equal to those of control Si. InSERT provides three advantages that are higher ion, higher throughput, and no need for implant retuning when compared to the conventional ex-situ dry etch and regrowth technique which exhibits an ion current gain of 23%.