Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

Author

Wen, H.-C. ; Alshareef, H.N. ; Luan, H. ; Choi, K. ; Lysaght, P. ; Harris, H.R. ; Huffman, C. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P. ; Huff, H. ; Majhi, P. ; Lee, B.H.

Author_Institution

Univ. of Texas, Austin, TX, USA

fYear

2005

fDate

14-16 June 2005

Firstpage

46

Lastpage

47

Abstract

Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO₂ and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

Keywords

CMOS logic circuits; amorphous semiconductors; dielectric materials; metal-insulator boundaries; nanotechnology; silicon compounds; sputter deposition; ternary semiconductors; work function; 1000 C; 4.16 to 4.8 eV; CMOS metal gates; EELS; HAADF-STEM; HRTEM; HfSiN; MoSiN; SiO₂; TaSiN; XRD; amorphous metals; amorphous transition-metal-silicon-nitride electrodes; electrical properties; high-k dielectrics; metal gate CMOS applications; work function; Amorphous materials; Annealing; Composite materials; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; Inorganic materials; Semiconductor films; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469206

Filename

1469206