Title :
Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications
Author :
Wen, H.-C. ; Alshareef, H.N. ; Luan, H. ; Choi, K. ; Lysaght, P. ; Harris, H.R. ; Huffman, C. ; Brown, G.A. ; Bersuker, G. ; Zeitzoff, P. ; Huff, H. ; Majhi, P. ; Lee, B.H.
Author_Institution :
Univ. of Texas, Austin, TX, USA
Abstract :
Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.
Keywords :
CMOS logic circuits; amorphous semiconductors; dielectric materials; metal-insulator boundaries; nanotechnology; silicon compounds; sputter deposition; ternary semiconductors; work function; 1000 C; 4.16 to 4.8 eV; CMOS metal gates; EELS; HAADF-STEM; HRTEM; HfSiN; MoSiN; SiO2; TaSiN; XRD; amorphous metals; amorphous transition-metal-silicon-nitride electrodes; electrical properties; high-k dielectrics; metal gate CMOS applications; work function; Amorphous materials; Annealing; Composite materials; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; Inorganic materials; Semiconductor films; X-ray scattering;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469206
