DocumentCode :
3549780
Title :
Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric
Author :
Park, Chang Seo ; Cho, Byung Jin ; Hwang, Wan Sik ; Loh, Wei Yip ; Tang, Lei Jun ; Kwong, Dim Lee
Author_Institution :
Dept. of Eelectrical & Comput. Eng., National Univ. of Singapore, Singapore
fYear :
2005
fDate :
14-16 June 2005
Firstpage :
48
Lastpage :
49
Abstract :
Dual metal gate integration scheme of using substituted Al (SA) and PtxSi with high Pt concentration on high-K dielectric is proposed. The process can achieve a wide range of work function difference (0.65 eV) and is almost free from Fermi level pinning, without adverse effects of polysilicon predoping.
Keywords :
Fermi level; MOCVD; MOSFET; aluminium; annealing; chemical exchanges; dielectric materials; integrated circuits; nanotechnology; platinum compounds; semiconductor device metallisation; semiconductor-insulator-semiconductor structures; work function; Al; Fermi level pinning; PtSi; dopant-free polysilicon; dual metal gate integration scheme; dual metal gate process; high-k dielectric; metal substitution; polysilicon predoping; work function; Annealing; Boron; High-K gate dielectrics; Leakage current; MOSFET circuits; Microelectronics; Silicides; Silicon; Temperature; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
Type :
conf
DOI :
10.1109/.2005.1469207
Filename :
1469207
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3549780
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