Title :
Very high K and high density TiTaO MIM capacitors for analog and RF applications
Author :
Chiang, K.C. ; Chin, Albert ; Lai, C.H. ; Chen, W.J. ; Cheng, C.F. ; Hung, B.F. ; Liao, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
For the first time, high density (10.3 fF/μm2), low voltage linearity (α=89 ppm/V2) and small leakage current (1.2×10-82 A/cm2 or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-K TiTaO (K=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm2 density and low 81 ppm/V2 linearity for higher speed analog/RF ICs at 1GHz, using the fast α decay mechanism with increasing frequency.
Keywords :
MIM devices; annealing; capacitors; leakage currents; plasma deposition; radiofrequency integrated circuits; tantalum compounds; titanium compounds; 1 GHz; ITRS requirements; MIM capacitors; TiTaO; analog capacitor; analog-RF IC; fast α-decay mechanism; high work function Ir capacitor; high-K dielectric; leakage current; low voltage linearity; Annealing; Capacitance; Crystallization; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Radio frequency;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469213
