Title :
Highly reliable HfSiON CMOSFET with phase controlled NiSi (NFET) and Ni3Si (PFET) FUSI gate electrode
Author :
Terai, Masayuki ; Takahashi, Kensuke ; Manabe, Kenzo ; Hase, Takashi ; Ogura, Takashi ; Saitoh, Motofumi ; Iwamoto, Toshiyuki ; Tatsumi, Toru ; Watanabe, Hirohito
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
We have clarified that the Ni/Si composition of gate electrode and Hf/Si composition of HfSiON gate insulator are the important parameter to obtain suitable Vth of CMOS. The amount of Hf-Si bonds at the gate/insulator interface is key parameter to control Fermi-level pinning effect. The crystalline phase controlled full Ni-silicide gate (PC-FUSI) and 50% Hf composition HfSiON realize suitable Vth=+/-0.5V with tight distribution. Performance improvement (NFET:1.28 times and PFET:1.52 times) of PC-FUSI FET was also confirmed against poly-Si gate FET with keeping low leakage current. Sufficient long term reliability was also demonstrated through BT stress evaluation.
Keywords :
CMOS integrated circuits; MIS structures; MOSFET; annealing; dielectric thin films; field effect integrated circuits; hafnium compounds; leakage currents; nickel; nitridation; semiconductor device reliability; silicon compounds; BT stress evaluation; CMOSFET; FUSI gate electrode; Fermi-level pinning effect; Ni-HfSiON; PC-FUSI FET; crystalline phase control; gate insulator; gate/insulator interface; long-term reliability; low leakage current; Annealing; CMOS process; CMOSFETs; Crystallization; Electrodes; FETs; Hafnium oxide; Insulation; Leakage current; Silicides;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469215
