Superior mobility characteristics in [110]-oriented ultra thin body pMOSFETs with SOI thickness less than 6 nm

This paper reports the first experimental demonstration of superior mobility in [110]-oriented UTB pMOSFETs with t_SOI ranging from 32 nm down to 2.3 nm. It is shown that the mobility, which is much higher than that in the universal curve in conventional (100)-oriented pMOSFET, is not degraded until t_SOI is thinned to 3 nm. The high mobility in the UTB regime in [110] pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to channel surface.