Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

Author

Cho, S.L. ; Yi, J.H. ; Ha, Y.H. ; Kuh, B.J. ; Lee, C.M. ; Park, J.H. ; Nam, S.D. ; Horii, H. ; Cho, B.O. ; Ryoo, K.C. ; Park, S.O. ; Kim, H.S. ; Chung, U-in ; Moon, J.T. ; Ryu, B.-I.

Author_Institution

Process Dev. Team, Samsung Electron. Co. Ltd., South Korea

fYear

2005

fDate

14-16 June 2005

Firstpage

96

Lastpage

97

Abstract

We firstly fabricated on-axis confined structure and evaluated based on 64Mb PRAM with 0.12μm-CMOS technologies. Ge₂Sb₂Te ₅ was confined within small pore, which resulted in low writing current of 0.4mA. The pore is on-axis with upper and lower contacts, which leads to good scalability of PRAM above 256Mb. The confined structure was relatively insensitive to small cell edge damage effect. The on-axis confined structure is a promising candidate for high density PRAM due to low writing current, good scalability, and insensitiveness to edge damage.

Keywords

CMOS integrated circuits; chalcogenide glasses; germanium compounds; random-access storage; 0.12 micron; CMOS technology; Ge₂Sb₂Te₅; PRAM; on-axis confined structure; Degradation; Electrodes; Electronics industry; Moon; Nonvolatile memory; Phase change random access memory; Scalability; Tellurium; Testing; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469226

Filename

1469226