Title :
Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb
Author :
Cho, S.L. ; Yi, J.H. ; Ha, Y.H. ; Kuh, B.J. ; Lee, C.M. ; Park, J.H. ; Nam, S.D. ; Horii, H. ; Cho, B.O. ; Ryoo, K.C. ; Park, S.O. ; Kim, H.S. ; Chung, U-in ; Moon, J.T. ; Ryu, B.-I.
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., South Korea
Abstract :
We firstly fabricated on-axis confined structure and evaluated based on 64Mb PRAM with 0.12μm-CMOS technologies. Ge2Sb2Te 5 was confined within small pore, which resulted in low writing current of 0.4mA. The pore is on-axis with upper and lower contacts, which leads to good scalability of PRAM above 256Mb. The confined structure was relatively insensitive to small cell edge damage effect. The on-axis confined structure is a promising candidate for high density PRAM due to low writing current, good scalability, and insensitiveness to edge damage.
Keywords :
CMOS integrated circuits; chalcogenide glasses; germanium compounds; random-access storage; 0.12 micron; CMOS technology; Ge2Sb2Te5; PRAM; on-axis confined structure; Degradation; Electrodes; Electronics industry; Moon; Nonvolatile memory; Phase change random access memory; Scalability; Tellurium; Testing; Writing;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469226
