Title :
Sub-1.2V operational, 0.15μm/12F2 cell FRAM technologies for next generation SoC applications
Author :
Kang, Y.M. ; Kim, Kinam ; Joo, H.J. ; Kang, S.K. ; Rhie, H.S. ; Park, J.H. ; Choi, D.Y. ; Oh, S.G. ; Koo, B.J. ; Lee, S.Y. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Adv. Technol. Dev. Team, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
We have successfully demonstrated a 0.15μm/12F2 (0.27μm2) cell ITIC, COB FRAM. The key technologies for the achievement of the world smallest FRAM cell are newly developed 200nm thick ferroelectric capacitor stack technology and novel one-mask capacitor etching technology. Integration induced hydrogen damage was minimized by a new Al2O3 barrier processed at elevated temperature. The fully processed experimental 64k bit array of the 0.27μm2 FRAM cell shows a sensing window of 260mV at 1.2V. The minimum operation voltage was 0.9V. The cell size and operating voltage meet the requirements for embedded applications.
Keywords :
aluminium compounds; etching; ferroelectric capacitors; random-access storage; system-on-chip; 0.15 micron; Al2O3; FRAM technology; ITIC; SoC; capacitor etching technology; ferroelectric capacitor stack technology; hydrogen damage; Capacitors; Degradation; Electrodes; Etching; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Polarization; Random access memory;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469229
