DocumentCode
3549805
Title
Tall triple-gate devices with TiN/HfO2 gate stack
Author
Collaert, N. ; Demand, M. ; Ferain, I. ; Lisoni, J. ; Singanamalla, R. ; Zimmerman, P. ; Yim, Y.S. ; Schram, T. ; Mannaert, G. ; Goodwin, M. ; Hooker, J.C. ; Neuilly, F. ; Kim, M.C. ; De Meyer, K. ; De Gendt, S. ; Boullart, W. ; Jurezak, M. ; Biesemans, S
Author_Institution
IMEC, Leuven, Belgium
fYear
2005
fDate
14-16 June 2005
Firstpage
108
Lastpage
109
Abstract
We demonstrate for the first time the performance of aggressively scaled triple gate devices with a MOCVD TiN/HfO gate stack. The transistors have physical gate lengths down to 40 nm, and 60 nm tall and 10 nm wide fins. We show that MOCVD TiN can be used to successfully set the threshold voltage of both nMOS and pMOS devices in the range of |0.4-0.5| V. Devices with excellent Ion/Ioff behavior were obtained with reduced gate leakage values.
Keywords
MOCVD coatings; MOSFET; hafnium compounds; titanium compounds; HfO2 gate stack; MOCVD; TiN; TiN-HfO2; gate leakage; nMOS; pMOS; triple-gate device; Hafnium oxide; Paper technology; Tin; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-00-1
Type
conf
DOI
10.1109/.2005.1469231
Filename
1469231
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