A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

Author

Yeh, C.C. ; Wang, Tahui ; Liao, Y.Y. ; Tsai, W.J. ; Lu, Chih-Yuan ; Chen, M.S. ; Chen, Y.R. ; Chen, K.F. ; Han, Z.T. ; Wong, M.S. ; Hsu, S.M. ; Zous, N.K. ; On, T.F. ; Ting, WenChi ; Kit, J. ; Chih-Yuan Lu

Author_Institution

Technol. Dev. Center, Macronix Int. Co.,Lt, Hsin-Chu, Taiwan

fYear

2005

fDate

14-16 June 2005

Firstpage

116

Lastpage

117

Abstract

A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.

Keywords

NAND circuits; flash memories; semiconductor storage; silicon compounds; 2-bits-per-cell storage; BTB current sensing; FN electron injection; NAND array; PHINES memory cells; PHINES nitride trapping storage flash memory cell; SONOS cell structure; band-to-band hot-hole injection; mass storage applications; programming throughput; Degradation; Electron traps; Flash memory cells; Interchannel interference; Paper technology; Throughput; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469234

Filename

1469234