Title :
BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism
Author :
Jae Sung Sim ; Il Han Park ; Han Park ; Seongjae Cho ; Tae Hun Kim ; Ki Whan Song ; Jihye Kong ; Hyungcheol Shin ; Jong Duk Lee ; Byung-Gook Park
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.
Keywords :
NAND circuits; flash memories; hot carriers; semiconductor-insulator-semiconductor devices; tunnelling; 50 nm; BAVI-cell; F-N erase problem; NAND flash application; avalanche hot-hole injection mechanism; avalanche injection mechanism; band-to-band tunneling; p-channel SONOS memory; short channel effect; Application software; CMOS technology; Computer science; Doping; Electrons; Hot carriers; Nonvolatile memory; SONOS devices; Tunneling; Very large scale integration;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469237
