DocumentCode :
3549819
Title :
Direct measurement of effects of shallow-trench isolation on carrier profiles in sub-50 nm N-MOSFETs
Author :
Fukutome, H. ; Momiyama, Y. ; Tagawa, Y. ; Kubo, T. ; Aoyama, T. ; Arimoto, H. ; Nara, Y.
Author_Institution :
Fujitsu Labs. Ltd, Tokyo, Japan
fYear :
2005
fDate :
14-16 June 2005
Firstpage :
140
Lastpage :
141
Abstract :
The effects of shallow-trench isolation (STI) on the carrier profile of the extension region in sub-50-nm n-MOSFET were directly measured for the first time. The extension overlap length drastically decreased by 3 run within a distance from STI (Y) of 50 nm. In contrast, the channel concentration gradually increased within Y of 100 nm. The STI effect was also measured for transistors with a gate width of less than 130 nm in 6T-SRAM cell. Reduction of the STI effect by nitrogen co-implant suppressed sub-threshold leakage current by up to an order of magnitude and decreased fluctuation in the threshold voltage by 8 %.
Keywords :
MOSFET; SRAM chips; carrier mobility; integrated circuit measurement; ion implantation; isolation technology; leakage currents; nitrogen; 50 nm; 6T-SRAM cell; STI effect; carrier profiles; channel concentration; nitrogen co-implant; shallow-trench isolation; sub-50 nm N-MOSFETs; sub-threshold leakage current; threshold voltage; Electrodes; FETs; Fluctuations; Leakage current; MOSFET circuits; Nitrogen; Random access memory; Stress; Threshold voltage; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
Type :
conf
DOI :
10.1109/.2005.1469244
Filename :
1469244
Link To Document :
بازگشت