Title :
Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power application
Author :
Lee, Sung-Young ; Yoon, Eun-Jung ; Shin, Dong-Suk ; Kim, Sung-Min ; Suk, Sung-Dae ; Kim, Min-Sang ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Yongin, South Korea
Abstract :
Improving the MBCFET performance further, we have successfully fabricated single-metal-gate high-performance CMOS MBCFET with elevated flat source/drain (EF-S/D) formed by low temperature cyclic selective epitaxial growth (LTC-SEG) of Si. Due to the S/D engineering and LTC-SEG process, we could achieved the symmetric threshold voltage of 0.25V and -0.22V for TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), respectively. This single-metal MBCFET simultaneously satisfied the requirements of high-performance (HP) and low operating power (LOP) transistors in ITRS roadmap.
Keywords :
MOSFET; epitaxial growth; etching; low-power electronics; low-temperature techniques; nanoelectronics; semiconductor doping; silicon; titanium compounds; -0.22 V; 0.25 V; LTC-SEG process; etching; low operating power transistors; low temperature cyclic selective epitaxial growth; low-power electronics; low-temperature techniques; multi-bridge-channel MOSFET; n-channel MBCFET; nMBCFET; nanoelectronics; p-channel MBCFET; pMBCFET; semiconductor doping; single-metal MBCFET; single-metal-gate CMOS MBCFET; CMOS process; Capacitance; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Power MOSFET; Silicon germanium; Temperature; Threshold voltage;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469248
