Title :
Reliability of HfSiON as gate dielectric for advanced CMOS technology
Author :
Wang, Howard C H ; Tsai, Ching-Wei ; Chen, Shang-Jr ; Chan, Chien-Tai ; Lin, Huan-Just ; Jin, Ying ; Tao, Hun-Jan ; Chen, Shih-Chang ; Diaz, Carlos H. ; Ong, Tongchern ; Oates, Anthony S. ; Liang, Mong-Song ; Chi, Min-Hwa
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stability against partial-crystallization after 1100°C annealing, and the concomitantly reduced trap generation minimizes stress induced leakage current (SILC) and flicker noise degradation after PBTI stress. A new methodology is proposed, for the first time, to correctly predict HC lifetime of HfSiON nMOS based on electron trapping.
Keywords :
CMOS integrated circuits; MIS structures; MOSFET; annealing; dielectric materials; electron mobility; electron traps; flicker noise; hafnium compounds; hole mobility; hot carriers; leakage currents; life testing; semiconductor device reliability; thermal stability; 1100 C; HfSiON; advanced CMOS technology; concomitantly reduced trap generation; electron mobility; electron trapping; flicker noise degradation minimization; gate dielectric reliability; hole mobility; hot carrier lifetime prediction; nMOS; nitrogen incorporation optimization; pMOS NBT1 lifetime; partial-crystallization; stress induced leakage current minimization; thermal stability; CMOS technology; Charge carrier processes; Dielectrics; Electron mobility; Electron traps; Hot carriers; MOS devices; Nitrogen; Thermal stability; Thermal stresses;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469255
