• DocumentCode
    3549834
  • Title

    High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

  • Author

    Irisawa, Toshifumi ; Nuipata, T. ; Tezuka, Tsutomu ; Usuda, Koji ; Hirashita, Norio ; Sugiyama, Naoharu ; Toyoda, Eiji ; Takagi, Shin-ichi

  • Author_Institution
    MIRAI-ASET, Kawasaki, Japan
  • fYear
    2005
  • fDate
    14-16 June 2005
  • Firstpage
    178
  • Lastpage
    179
  • Abstract
    Novel uniaxially-strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing lateral strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, Ion enhancement of 80% is demonstrated in 40 nm gate length uniaxially-strained SGOI pMOSFETs.
  • Keywords
    Ge-Si alloys; MOSFET; carrier mobility; metal-insulator boundaries; nanoelectronics; silicon-on-insulator; SiGe-on-insulator; high current drive uniaxially-strained SGOI pMOSFET; lateral strain relaxation; mobility enhancement; Capacitive sensors; Compressive stress; Fabrication; Germanium silicon alloys; Lattices; MOSFETs; Silicon germanium; Strain measurement; Tensile stress; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
  • Print_ISBN
    4-900784-00-1
  • Type

    conf

  • DOI
    10.1109/.2005.1469258
  • Filename
    1469258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549834