Author :
Suzuki, T. ; Fukumoto, Y. ; Mori, K. ; Honjo, H. ; Nebashi, R. ; Miura, S. ; Nagahara, K. ; Saito, S. ; Numata, H. ; Tsuji, K. ; Sugibayashi, T. ; Hada, H. ; Ishiwata, N. ; Asao, Y. ; Ikegawa, S. ; Yoda, H. ; Tahara, S.
Author_Institution :
Labs. of Syst. Devices Res., NEC Corp., Kanagawa, Japan
Abstract :
Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.
Keywords :
cellular arrays; ferromagnetic materials; memory architecture; nanoelectronics; random-access storage; switching circuits; thermal stability; antiferromagnetically coupled ferromagnetic layers; high density MRAM; large write margin; low switching current; small spin flop field; thermal stability; toggling MRAM; toggling cell; Antiferromagnetic materials; Automatic frequency control; CMOS technology; Energy barrier; Laboratories; National electric code; Nonvolatile memory; Scalability; Thermal stability; Writing;
