Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate

Author

Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang ; Oh, Chang Woo ; Suk, Sung Dae ; Li, Ming ; Lee, Sung Young ; Yeo, Kyoung Hwan ; Kim, Sung Hwan ; Choe, Dong Uk ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Kyoungi-Do, South Korea

fYear

2005

fDate

14-16 June 2005

Firstpage

196

Lastpage

197

Abstract

We demonstrate for the first time high performance titanium nitride (TiN) single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor on bulk Si wafer. This single metal gate McFET shows suitable threshold voltage (VT) and excellent transistor characteristics of SS (sub-threshold swing) and DIBL (drain induced barrier lowering) with V_TN =+0.3V and V_TP=-0.3V. The SRAM cell with this CMOS McFET, high static noise margin (SNM) of 350mV is achieved at 1.0V.

Keywords

CMOS memory circuits; MIS structures; MOSFET; SRAM chips; cellular arrays; field effect transistors; semiconductor junctions; silicon; titanium compounds; 1 V; 350 mV; 65 nm; CMOS McFET SRAM cell transistor; TiN-Si; bulk silicon substrate; drain induced barrier lowering; multichannel field effect transistor; static noise margin; subthreshold swing; threshold voltage; titanium nitride single metal gate; Electrodes; FETs; Fabrication; FinFETs; MOSFET circuits; Manufacturing processes; Random access memory; Substrates; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469265

Filename

1469265