Title :
Novel SiO2/AlN/HfAIO/IrO2 memory with fast erase, large ΔVth and good retention
Author :
Lai, C.H. ; Chin, Alvin ; Chiang, K.C. ; Yoo, W.J. ; Cheng, C.F. ; McAlister, S.P. ; Chi, C.C. ; Wua, P.
Author_Institution :
Dept. of Electron. Eng., National Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Using the strong trapping capability of novel AlN (k=10), low voltage drop in high-K layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(k=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.
Keywords :
MIS devices; aluminium compounds; dielectric materials; electron traps; hafnium compounds; iridium compounds; leakage currents; memory architecture; semiconductor storage; silicon compounds; wide band gap semiconductors; 1.9 V; 13 V; 3.4 V; 3.7 V; 5.5 V; 85 C; SiO2-AlN-HfAlO-IrO2; fast erase; leakage current; memory integrity; strong trapping capability; Capacitance; Councils; Dielectrics; Electron traps; Leakage current; Low voltage; MONOS devices; Nonvolatile memory; Physics computing; Stress;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469271
