DocumentCode :
3549856
Title :
Impact of electrode-side chemical structures on electron mobility in metal/HfO2 MISFETs with sub-1nm EOT
Author :
Akasaka, Y. ; Miyagawa, K. ; Sasaki, T. ; Shiraishi, K. ; Kamiyama, S. ; Ogawa, O. ; Ootsuka, F. ; Nara, Y.
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fYear :
2005
fDate :
14-16 June 2005
Firstpage :
228
Lastpage :
229
Abstract :
Extremely high (247cm2/Vs at peak) electron mobility has been obtained by sub-1 nm EOT of n-metal/HfO2 MISFET with well-controlled metal/HfO2 interface. It was found that Coulomb scattering due to nitrogen induced fixed charge degrades the mobility by analyzing the chemical structures of the metal electrode/HfO2 interface using backside XPS. Based on a consideration of this result, high-performance nMISFET has been fabricated by using nitrogen-free TaSix (Πm_eff=4.36eV on HfO2) as the gate electrode.
Keywords :
MIS structures; MISFET; chemical structure; electron mobility; hafnium compounds; nanotechnology; Coulomb scattering; HfO2; MISFETs; backside XPS; electrode-side chemical structures; electron mobility; gate electrode; metal electrode; nitrogen induced fixed charge; Chemical analysis; Degradation; Electron mobility; Hafnium oxide; MISFETs; Nitrogen; Plasma temperature; Temperature dependence; Tin; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
Type :
conf
DOI :
10.1109/.2005.1469278
Filename :
1469278
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3549856
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