• DocumentCode
    3549856
  • Title

    Impact of electrode-side chemical structures on electron mobility in metal/HfO2 MISFETs with sub-1nm EOT

  • Author

    Akasaka, Y. ; Miyagawa, K. ; Sasaki, T. ; Shiraishi, K. ; Kamiyama, S. ; Ogawa, O. ; Ootsuka, F. ; Nara, Y.

  • Author_Institution
    Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
  • fYear
    2005
  • fDate
    14-16 June 2005
  • Firstpage
    228
  • Lastpage
    229
  • Abstract
    Extremely high (247cm2/Vs at peak) electron mobility has been obtained by sub-1 nm EOT of n-metal/HfO2 MISFET with well-controlled metal/HfO2 interface. It was found that Coulomb scattering due to nitrogen induced fixed charge degrades the mobility by analyzing the chemical structures of the metal electrode/HfO2 interface using backside XPS. Based on a consideration of this result, high-performance nMISFET has been fabricated by using nitrogen-free TaSix (Πm_eff=4.36eV on HfO2) as the gate electrode.
  • Keywords
    MIS structures; MISFET; chemical structure; electron mobility; hafnium compounds; nanotechnology; Coulomb scattering; HfO2; MISFETs; backside XPS; electrode-side chemical structures; electron mobility; gate electrode; metal electrode; nitrogen induced fixed charge; Chemical analysis; Degradation; Electron mobility; Hafnium oxide; MISFETs; Nitrogen; Plasma temperature; Temperature dependence; Tin; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
  • Print_ISBN
    4-900784-00-1
  • Type

    conf

  • DOI
    10.1109/.2005.1469278
  • Filename
    1469278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549856