Title :
Statistical modeling of GaAs MESFETs
Author :
Bandler, J.W. ; Biernacki, R.M. ; Chen, S.H. ; Song, J. ; Ye, S. ; Zhang, Q.J.
Author_Institution :
McMaster Univ., Hamilton, Ont., Canada
Abstract :
The authors contrast the statistical extraction of GaAs MESFET equivalent circuit model parameters and physical model parameters from wafer measurements. It is observed that the equivalent-circuit model of A. Materka and T. Kacprzak (1985) provides a better match for individual devices but the model based on physical parameters of P.H. Ladbrooke (1989) provides a better estimate of device statistics. It is also shown that the Materka and Kacprzak equivalent-circuit model can accurately fit the data from which the model parameters are extracted, because it has fewer constraints than the physical model.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; GaAs MESFETs; Ladbrooke model; Materka and Kacprzak model; device statistics; equivalent circuit model parameters; equivalent-circuit model; individual devices; physical model parameters; semiconductors; statistical extraction; wafer measurements; Computational modeling; Data mining; Electrons; Equivalent circuits; FETs; Gallium arsenide; MESFETs; Semiconductor device modeling; Statistics; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146931
