MQW wavelength-tunable DBR lasers with monolithically integrated external-cavity electroabsorption modulators with low-driving-voltages fabricated by selective-area MOCVD

Summary form only given. Recently, lasers with monolithically integrated external modulators fabricated using selective-area epitaxy in the InGaAs-InGaAsP material system have received much attention for applications in long distance fiber communication. As of yet little work has been done on lasers with monolithically integrated modulators in the InGaAs-GaAs material system. Applications for lasers with monolithically integrated external-cavity modulators in the InGaAs-GaAs material system include wavelength-division multiplexing (WDM) local area networks and differential absorption LIDAR systems, for both of which low chirp is desired. We present a multiple quantum well (MQW) wavelength-tunable distributed Bragg reflector (DBR) laser with monolithically integrated external-cavity electroabsorption (EA) modulator.