Title :
An accurate HEMT large signal model usable in SPICE simulators
Author :
Staudinger, J. ; Miller, M. ; Golio, M. ; Beckwith, B. ; Halchin, D.
Author_Institution :
Motorola Strategic Electron. Div., Chandler, AZ, USA
Abstract :
A large-signal HEMT (high-electron-mobility-transistor) model has been developed and implemented within a parameter extractor program and SPICE. The model predicts HEMT behavior significantly better than previous MESFET models, but it also exhibits some deficiencies at high bias levels. The parameter extraction results indicate that the addition of a V/sub ds/ dependent critical voltage for the onset of transconductance degradation may improve the model. The validity of the model has been examined by comparing harmonic content predicted by SPICE to measured results.<>
Keywords :
harmonics; high electron mobility transistors; semiconductor device models; solid-state microwave devices; HEMT; SPICE simulators; dependent critical voltage; harmonic content; high-electron-mobility-transistor; large signal model; onset of transconductance degradation; parameter extraction; parameter extractor program; Circuit simulation; Current measurement; HEMTs; MESFETs; Parameter extraction; Predictive models; SPICE; Scattering parameters; Transconductance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146934
