An accurate HEMT large signal model usable in SPICE simulators

Author

Staudinger, J. ; Miller, M. ; Golio, M. ; Beckwith, B. ; Halchin, D.

Author_Institution

Motorola Strategic Electron. Div., Chandler, AZ, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

99

Abstract

A large-signal HEMT (high-electron-mobility-transistor) model has been developed and implemented within a parameter extractor program and SPICE. The model predicts HEMT behavior significantly better than previous MESFET models, but it also exhibits some deficiencies at high bias levels. The parameter extraction results indicate that the addition of a V/sub ds/ dependent critical voltage for the onset of transconductance degradation may improve the model. The validity of the model has been examined by comparing harmonic content predicted by SPICE to measured results.<>

Keywords

harmonics; high electron mobility transistors; semiconductor device models; solid-state microwave devices; HEMT; SPICE simulators; dependent critical voltage; harmonic content; high-electron-mobility-transistor; large signal model; onset of transconductance degradation; parameter extraction; parameter extractor program; Circuit simulation; Current measurement; HEMTs; MESFETs; Parameter extraction; Predictive models; SPICE; Scattering parameters; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146934

Filename

146934