An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90 nm RF CMOS

Author

Linten, D. ; Thijs, S. ; Jeamsaksiri, W. ; Ramos, J. ; Mercha, A. ; Natarajan, M.I. ; Wambacq, P. ; Scholten, A.J. ; Decoutere, S.

Author_Institution

Inter-Univ. Micro-Electron. Center, Leuven, Belgium

fYear

2005

fDate

16-18 June 2005

Firstpage

86

Lastpage

89

Abstract

A fully integrated 5 GHz low-power electrostatic discharge (ESD)-protected low-noise amplifier (LNA) in 90 nm CMOS is presented. This 9 mW LNA, with a 1.2 volt supply voltage, features a 12 dB power gain and 3.4 dB noise figure, while maintaining an input return loss below -20 dB. The LNA is ESD protected up to 5.5 kV human body model (HBM) using an on-chip inductor and clamping diodes, implemented as "plug-and-play" components. To the authors\´ knowledge, this LNA achieves the highest ever-reported ESD protection level in any 90 nm RF CMOS technology.

Keywords

CMOS digital integrated circuits; diodes; electrostatic discharge; inductors; radiofrequency amplifiers; 1.2 V; 12 dB; 5 GHz; 5.5E3 V; 9 mW; 90 nm; HBM ESD protection; RF CMOS; clamping diodes; electrostatic discharge; human body model; low-noise amplifier; on-chip inductor; radio frequency; Biological system modeling; CMOS technology; Electrostatic discharge; Gain; Humans; Low-noise amplifiers; Noise figure; Protection; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-01-X

Type

conf

DOI

10.1109/VLSIC.2005.1469340

Filename

1469340