Title :
A DC-2.5GHz wide dynamic-range attenuator in 0.13μm CMOS technology
Author :
Dogan, Hakan ; Meyer, Robert G. ; Niknejad, Ali M.
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
A CMOS attenuator with wide dynamic range has been designed and fabricated in a 0.13μm CMOS process. The design employs two nonidentical cascaded T-stages that are activated consecutively to improve linearity. The design operates in the frequency band of DC-2.5GHz with 0.9-3.5dB insertion loss and 42dB maximum attenuation in the entire frequency range. Worst case SII is -8.2dB across the frequency band. The design achieves an IIP3 of +20 dBm at mid-attenuation.
Keywords :
CMOS integrated circuits; attenuators; 0.13 micron; CMOS attenuator; CMOS technology; insertion loss; Attenuation; Attenuators; CMOS process; CMOS technology; Circuits; Frequency; Gain control; Impedance; Insertion loss; Linearity;
Conference_Titel :
VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-01-X
DOI :
10.1109/VLSIC.2005.1469341
