DocumentCode :
3549934
Title :
Non-volatile memory technologies for beyond 2010
Author :
Shin, Yunseung
Author_Institution :
Memory Div., Samsung Electron. Co., Gyeonggi-Do, South Korea
fYear :
2005
fDate :
16-18 June 2005
Firstpage :
156
Lastpage :
159
Abstract :
The development of Flash memory technology over the past decade has been one of the driving forces behind the tremendous growth in digital consumer applications, such as digital cameras, handheld music players and mobile phones. NAND Flash has been leading the way from 16Mb in 1994 to 4Gb today. This paper discusses the impact of continuous advances in NAND Flash technology on consumer applications and also reviews technical challenges to the further scaling of NAND and NOR Flash memories, while considering the possibility of other nonvolatile memory technologies for high density nonvolatile data storage beyond 2010.
Keywords :
consumer electronics; flash memories; Flash memory technology development; NAND Flash; NOR Flash memory; digital camera; digital consumer application; handheld music player; mobile phone; nonvolatile data storage; nonvolatile memory technology; Costs; Digital cameras; Flash memory; High definition video; Interleaved codes; Mobile handsets; Nonvolatile memory; Paper technology; Switches; Telephone sets;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-01-X
Type :
conf
DOI :
10.1109/VLSIC.2005.1469355
Filename :
1469355
Link To Document :
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