DocumentCode
3549938
Title
A novel voltage sensing 1T/2MTJ cell with resistance ratio for highly stable and scalable MRAM
Author
Aoki, Masaki ; Iwasa, Hiroshi ; Sato, Yoshihiro
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2005
fDate
16-18 June 2005
Firstpage
170
Lastpage
171
Abstract
We propose a new scalable MRAM cell that consists of one transistor (IT) and two magnetic tunnel junctions (2MTJ), and can sense voltage directly divided with resistance ratio of 2MTJ. This circuit scheme enables to use folded bit line architecture with fixed reference voltage resulting into stable operation. The cell operations are demonstrated using SPICE simulations based on the measured characteristics of the series connected two magnetic tunnel junctions.
Keywords
SPICE; electric sensing devices; magnetic tunnelling; magnetoresistive devices; random-access storage; MRAM; SPICE simulation; folded bit line architecture; magnetic tunnel junction; magnetoresistive random access memory; transistor; voltage sensing 1T/2MTJ cell; Circuit simulation; Clamps; Electrical resistance measurement; Laboratories; Magnetic tunneling; Nonvolatile memory; Random access memory; SPICE; Signal detection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-01-X
Type
conf
DOI
10.1109/VLSIC.2005.1469359
Filename
1469359
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