DocumentCode :
3549956
Title :
A 90-GHz voltage-controlled oscillator with a 2.2-GHz tuning range in a 130-nm CMOS technology
Author :
Cao, Changhua ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fYear :
2005
fDate :
16-18 June 2005
Firstpage :
242
Lastpage :
243
Abstract :
A 90-GHz LC-resonator based voltage-controlled oscillator (VCO) is fabricated in a 130-nm foundry CMOS process. The core transistor structure has been optimized to reduce parasitic capacitances. An accumulation mode MOS varactor has been optimized to achieve Q of ∼7 at 90 GHz or ∼600 at 1 GHz. The VCO is tuned by changing the bias voltage of current source transistor, which modifies the DC bias for core transistors, and that for the varactors to achieve a tuning range of 2.2 GHz. The VCO core consumes 5 to 10.5-mA current from a 1.5-V supply. The phase noise at 10-MHz offset from carrier varies between -104 to -106 dBc/Hz over the tuning range.
Keywords :
CMOS integrated circuits; MOS capacitors; integrated circuit design; millimetre wave oscillators; varactors; voltage-controlled oscillators; 1 GHz; 1.5 V; 10 MHz; 130 nm; 2.2 GHz; 5 to 10.5 mA; 90 GHz; CMOS process; CMOS technology; LC-resonator; MOS varactor; current source transistor; parasitic capacitances; transistor structure; voltage-controlled oscillator; CMOS technology; Integrated circuit technology; Microwave technology; Parasitic capacitance; Phase noise; Power generation; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-01-X
Type :
conf
DOI :
10.1109/VLSIC.2005.1469376
Filename :
1469376
Link To Document :
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