A temperature stabilized CMOS VCO for zero-IF cellular CDMA receivers

Author

Wu, Yue ; Aparin, Vladimir

Author_Institution

Qualcomm Inc., San Diego, CA, USA

fYear

2005

fDate

16-18 June 2005

Firstpage

398

Lastpage

401

Abstract

A fully integrated CMOS VCO which has low temperature and power supply sensitivity has been implemented in a 0.25 μm 4-metal 1-poly process. The causes of oscillation frequency drift over temperature have been investigated. By adjusting the reverse biasing voltage of junction diodes and the back-side voltage of linearized MOS varactors, less than 10 ppm/°C frequency drift has been achieved at 1.7 GHz. Phase noise at 900 kHz offset is less than -134 dBc/Hz and varies less than 1 dBc over -30°C ∼+90°C.

Keywords

CMOS integrated circuits; cellular radio; code division multiple access; frequency stability; integrated circuit design; phase noise; radio receivers; varactors; voltage-controlled oscillators; 0.25 micron; 1.7 GHz; 4-metal 1-poly process; back-side voltage; frequency stability; junction diodes; linearized MOS varactor; oscillation frequency drift; phase noise; power supply sensitivity; reverse biasing voltage; temperature stabilized CMOS VCO; voltage-controlled oscillators; zero-IF cellular CDMA receivers; CMOS process; Diodes; Frequency; Multiaccess communication; Phase noise; Power supplies; Temperature sensors; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-01-X

Type

conf

DOI

10.1109/VLSIC.2005.1469413

Filename

1469413