Title :
High performance SiGe BiCMOS technology
Author :
Racanelli, Marco ; Voinegescu, Sorin ; Kempf, Paul
Author_Institution :
Jazz Semicond., Newport Beach, CA, USA
Abstract :
In this paper, we have reviewed SiGe BiCMOS technology and future map. In addition, we have seen that performance of today´s 0.18 μm production foundry process with Ft of 150 GHz and Fmax of 200 GHz is approaching performance levels required to address not only RF applications but also emerging applications in the mm-wave through several circuit block examples. Also, SiGe BiCMOS technology focusing on current SiGe device performance and on how device scaling brings about higher speeds in the future is reviewed.
Keywords :
BiCMOS integrated circuits; bipolar MIMIC; germanium; semiconductor materials; silicon; 150 GHz; 200 GHz; RF applications; SiGe; high performance BiCMOS technology; millimeter-wave applications; production foundry process; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Energy consumption; Germanium silicon alloys; Paper technology; Production; Prototypes; Radio frequency; Silicon germanium;
Conference_Titel :
Wireless Communications and Applied Computational Electromagnetics, 2005. IEEE/ACES International Conference on
Print_ISBN :
0-7803-9068-7
DOI :
10.1109/WCACEM.2005.1469617
