Title :
18-40 GHz 13 dBm low noise GaAs FET YIG tuned oscillator
Author :
Khanna, A.P.S. ; Hauptman, J.
Author_Institution :
Avantek Inc., Milpitas, CA, USA
Abstract :
A fundamental YIG-tuned oscillator has been developed using a submicron GaAs FET to cover 18 to 40 GHz. Power output of +13 dBm and phase noise of better than -100 dBc/Hz at 100 kHz from the carrier have been achieved. The approach used to design the oscillator circuit and the magnetic for the oscillator is discussed, and test data are presented.<>
Keywords :
III-V semiconductors; field effect transistors; microwave oscillators; solid-state microwave circuits; variable-frequency oscillators; 18 to 40 GHz; GaAs; YIG-tuned oscillator; magnetic; oscillator circuit; phase noise; power output; submicron FET; Bandwidth; Circuit testing; FETs; Frequency; Gallium arsenide; Local oscillators; Reflection; Semiconductor process modeling; Switching circuits; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146964
