DocumentCode
3550227
Title
18-40 GHz 13 dBm low noise GaAs FET YIG tuned oscillator
Author
Khanna, A.P.S. ; Hauptman, J.
Author_Institution
Avantek Inc., Milpitas, CA, USA
fYear
1991
fDate
10-14 July 1991
Firstpage
209
Abstract
A fundamental YIG-tuned oscillator has been developed using a submicron GaAs FET to cover 18 to 40 GHz. Power output of +13 dBm and phase noise of better than -100 dBc/Hz at 100 kHz from the carrier have been achieved. The approach used to design the oscillator circuit and the magnetic for the oscillator is discussed, and test data are presented.<>
Keywords
III-V semiconductors; field effect transistors; microwave oscillators; solid-state microwave circuits; variable-frequency oscillators; 18 to 40 GHz; GaAs; YIG-tuned oscillator; magnetic; oscillator circuit; phase noise; power output; submicron FET; Bandwidth; Circuit testing; FETs; Frequency; Gallium arsenide; Local oscillators; Reflection; Semiconductor process modeling; Switching circuits; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-87942-591-1
Type
conf
DOI
10.1109/MWSYM.1991.146964
Filename
146964
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