Title :
A wide-band 0.5 μm CMOS low-noise amplifier
Author :
Lo, Ivy ; Yo, Derek Ah ; Cheung, Ken ; Lubecke, Victor M. ; Boric-Lubecke, Olga
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Abstract :
A wide-band low-noise amplifier designed in 0.5 μm CMOS process is discussed in this paper. Simulation results show that this low-noise amplifier is able to achieve a very wide bandwidth from 70 MHz to 1.6 GHz, with the maximum gain of 12.4 dB, and NF below 2 dB. In addition, compared to other known CMOS wide-band topologies, this low-noise amplifier has a better linearity with its 1 dB compression point at 0.5 dBm.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; VHF amplifiers; low noise amplifiers; wideband amplifiers; 0.5 mum; 12.4 dB; 70 MHz to 1.6 GHz; CMOS; CMOS wide-band topologies; compression point; wide-band low-noise amplifier; Bandwidth; Broadband amplifiers; Frequency; Gain; Impedance matching; Low-noise amplifiers; MOS devices; Noise figure; Noise measurement; Resistors;
Conference_Titel :
Wireless Communications and Applied Computational Electromagnetics, 2005. IEEE/ACES International Conference on
Print_ISBN :
0-7803-9068-7
DOI :
10.1109/WCACEM.2005.1469699
