Title :
A physically based large signal HBT model with self heating and transit time effects
Author_Institution :
TRW Electron. Syst. Group, Redondo Beach, CA, USA
Abstract :
A physically based, time-dependent, large-signal HBT (heterojunction bipolar transistor) model is presented. It accounts for the time dependence of base, collector, and emitter charging, and it includes self-heating effects. The model tracks device performance over eight decades of current and can be used as the basis of SPICE model approximations. A hypothesis on the divergence of high-frequency large-signal SPICE simulations from measured data is presented. A new empirical equation for base-collector capacitance is included.<>
Keywords :
circuit CAD; heterojunction bipolar transistors; semiconductor device models; SPICE model approximations; base charging; base-collector capacitance; collector charging; emitter charging; large signal HBT model; self heating; transit time effects; Capacitance; Equations; Frequency; Heterojunction bipolar transistors; Predictive models; SPICE; Space charge; Space heating; Thermal resistance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146970
