Title :
GaAs HBT wideband and low power consumption amplifiers to 24 GHz
Author :
Kobayashi, K.W. ; Esfandiari, R. ; Hafizi, M.E. ; Streit, D.C. ; Oki, A.K. ; Kim, M.E.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The authors report on the design and performance of a 2-24-GHz distributed matrix amplifier and a 1-20-GHz two-stage Darlington coupled amplifier based on an advanced HBT (heterojunction bipolar transistor) MBE (molecular beam epitaxy) profile which increases the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances. The matrix amplifier has a 9.5-dB nominal gain and a 3-dB bandwidth to 24 GHz. The input and output VSWRs (voltage standing wave ratios) are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The two-stage Darlington amplifier has 7-dB gain and 3-dB bandwidth to 20 GHz. The input and output VSWRs are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66*1.05 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 1 to 24 GHz; 380 mW; 7 dB; 95 dB; HBT; MBE; bandwidth response; base-emitter capacitances; chip size; collector-base capacitances; distributed matrix amplifier; input VSWRs; matrix amplifier; output VSWRs; power consumption; two-stage Darlington coupled amplifier; wideband amplifiers; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical coupling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146977
