Semiconductor photonic-quantum-wire micro-ring lasers

Author

Cheng, Pai-Hsiang ; Lee, T.-D. ; Pan, Jeng-Shyang ; Tai, K. ; Lai, Y. ; Way Lin

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1996

fDate

2-7 June 1996

Firstpage

358

Lastpage

359

Abstract

Summary form only given. Micro-ring lasers can be regarded as photonic quantum wires and have attracted a lot of research interest because of their desired properties of high spontaneous emission factor and low lasing threshold. In our lab we have succeeded in fabricating both micro-disk and micro-ring InGaAsP-InGaAs quantum well semiconductor lasers by etching and bonding.

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; ring lasers; semiconductor quantum wires; spontaneous emission; InGaAsP-InGaAs; InGaAsP-InGaAs quantum well semiconductor lasers; bonding; etching; high spontaneous emission factor; low lasing threshold; micro-ring lasers; photonic quantum wires; semiconductor photonic-quantum-wire micro-ring lasers; Electrons; Laser modes; Mirrors; Pump lasers; Quantum well lasers; Reflectivity; Ring lasers; Semiconductor lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864786