DocumentCode
3550553
Title
An X-band high-efficiency ion-implanted MMIC power amplifier
Author
Le, H. ; Shih, Y.C. ; Hwang, V. ; Chi, T. ; Kasel, K. ; Wang, D.C.
Author_Institution
Hughes Aircraft Co., Torrance, CA, USA
fYear
1991
fDate
10-14 July 1991
Firstpage
323
Abstract
A state-of-the-art X-band high-efficiency MMIC power amplifier has been demonstrated. An average output power of 3.6 W at an average 41% power-added efficiency over a 40% bandwidth from 7.0 to 10.5 GHz has been achieved. An average power density of 500 mW/mm and peak power density of 550 mW/mm have been measured across this bandwidth. Peak efficiencies of 56% at 7 GHz and above 50% from 7.5 to 9 GHz were achieved when the drain was biased at 6 V.<>
Keywords
MMIC; Schottky gate field effect transistors; field effect integrated circuits; ion implantation; microwave amplifiers; power amplifiers; 3.6 W; 41 to 56 percent; 7 to 10.5 GHz; MESFET; MMIC; SHF; X-band; high-efficiency; ion-implanted; power amplifier; power-added efficiency; Bandwidth; Circuit topology; Driver circuits; FETs; High power amplifiers; Impedance matching; MMICs; Network synthesis; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-87942-591-1
Type
conf
DOI
10.1109/MWSYM.1991.146996
Filename
146996
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