Title :
Self organized InAs-GaAs quantum dots injection laser structure
Author :
Kop´ev, P.S. ; Ledentsov, Nikolay N. ; Ustinov, V.M. ; Kochnev, I.V. ; Bert, N.A. ; Egorov, A.Yu. ; Zhukov, A.E. ; Komin, V.V. ; Kosogov, A.O. ; Krestnikov, I.L. ; Maximov, M.V. ; Ruvimov, S.S. ; Sakharov, A.V. ; Sherniakov, Yu.M. ; Zaitsev, S.V. ; Alfero
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Summary form only given. MOCVD grown double heterojunction GaAs-AlGaAs quantum dot injection lasers were grown with InGaAs islands introduced in the active region. The photoluminescence (PL) spectrum of the laser structure with etched off contact layer is shown.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; self-adjusting systems; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; GaAs-AlGaAs; GaAs-AlGaAs quantum dot injection lasers; InAs-GaAs; InAs-GaAs self organised quantum dot injection laser structure; InGaAs islands; MOCVD grown; active region; double heterojunction; etched off contact layer; laser structure; photoluminescence spectrum; Current density; Electroluminescence; Gallium arsenide; Photoluminescence; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
