High performance MMIC 20 GHz LNA and 44 GHz power amplifier using planar-doped InGaAs HEMTs

GaAs-based InGaAs pseudomorphic high electron mobility transistors (HEMTs) have demonstrated superior low-noise and high-power capabilities at microwave and millimeter-wave frequencies. The authors present a pair of 3-stage amplifiers fabricated with the same process demonstrating excellent noise and power performance. A K-band fully monolithic LNA (low-noise amplifier) has been demonstrated greater than 33 dB gain over a 4 GHz bandwidth with a noise figure of less than 2 dB over 2 GHz. A Q-band power amplifier has demonstrated an output power of 13.3 dBm at 1 dB compression with 25.3 dB of gain and a saturated output power of 16.1 dBm at 40 GHz. These amplifiers are designed for insertion into future EHF satellite communication ground terminals.<>