Title :
A stable GaAs 6-20 GHz high gain and power TWA
Author_Institution :
Hewlett-Packard, San Jose, CA, USA
Abstract :
A stable power cascode distributed amplifier is demonstrated over the 6 to 20 GHz band. This monolithic GaAs traveling wave amplifier exhibits a minimum gain above 11 dB with +or-0.5 dB of gain flatness over the band. The output power at the 1 dB gain compression point is over 24 dBm at 20 GHz. The input/output return loss is better than 12 dB over the band. This chip was fabricated using a 0.4 mu m MESFET process and measures 3.02 mm*0.89 mm (area of 2.7 mm/sup 2/). This power wideband amplifier employs 7 cascode stages. The excellent performance is achieved with specially chosen transmission lines connecting the second gates and vias of each stage. This technique yields stability along with higher gain and power by eliminating the need for damping networks.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; wideband amplifiers; 0.4 micron; 11 dB; 12 dB; 3.02 mm; 6 to 20 GHz; GaAs; MESFET; cascode stages; damping networks elimination; gain; gain flatness; input/output return loss; output power; power cascode distributed amplifier; power wideband amplifier; semiconductors; transmission lines; traveling wave amplifier; Area measurement; Broadband amplifiers; Distributed amplifiers; Gain; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Semiconductor device measurement; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147029
