Title :
Influence of an external mechanical force on light emission from strained 1.3 /spl mu/m semiconductor lasers: polarization switching and mode spectra
Author :
Klehr, Andreas ; Muller, Rudolf ; Enders, P.
Author_Institution :
Max-Born-Inst., Berlin, Germany
Abstract :
Summary form only given. The polarization of light from strained semiconductor lasers can switch between TE and TM polarization in dependence on the strain in the active layer and the injection current. Experimental investigations of this effect give insight into the nonlinear interaction between differently polarized cavity modes. We have presented systematic experimental and theoretical investigations of the influence of strain on the emission properties of 1.3 /spl mu/m InGaAsP-InP ridge waveguide lasers by applying an external mechanical force.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser modes; laser transitions; light polarisation; nonlinear optics; ridge waveguides; semiconductor lasers; waveguide lasers; 1.3 mum; InGaAsP-InP; InGaAsP-InP ridge waveguide lasers; TE polarization; TM polarization; active layer strain; differently polarized cavity modes; emission properties; external mechanical force; injection current; light emission; mode spectra; nonlinear interaction; polarization switching; strained /spl mu/m semiconductor lasers; strained semiconductor laser light polarisation switching; Capacitive sensors; Laser modes; Laser theory; Mechanical factors; Optical polarization; Semiconductor lasers; Switches; Tellurium; Waveguide lasers; Waveguide theory;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
