Influence of an external mechanical force on light emission from strained 1.3 /spl mu/m semiconductor lasers: polarization switching and mode spectra

Author

Klehr, Andreas ; Muller, Rudolf ; Enders, P.

Author_Institution

Max-Born-Inst., Berlin, Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

385

Lastpage

386

Abstract

Summary form only given. The polarization of light from strained semiconductor lasers can switch between TE and TM polarization in dependence on the strain in the active layer and the injection current. Experimental investigations of this effect give insight into the nonlinear interaction between differently polarized cavity modes. We have presented systematic experimental and theoretical investigations of the influence of strain on the emission properties of 1.3 /spl mu/m InGaAsP-InP ridge waveguide lasers by applying an external mechanical force.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser modes; laser transitions; light polarisation; nonlinear optics; ridge waveguides; semiconductor lasers; waveguide lasers; 1.3 mum; InGaAsP-InP; InGaAsP-InP ridge waveguide lasers; TE polarization; TM polarization; active layer strain; differently polarized cavity modes; emission properties; external mechanical force; injection current; light emission; mode spectra; nonlinear interaction; polarization switching; strained /spl mu/m semiconductor lasers; strained semiconductor laser light polarisation switching; Capacitive sensors; Laser modes; Laser theory; Mechanical factors; Optical polarization; Semiconductor lasers; Switches; Tellurium; Waveguide lasers; Waveguide theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864825