Multiple exposure interferometric lithography-a novel approach to nanometer structures

Summary form only given. Trends in both integrated circuit and flat-panel display manufacturing technologies require improvements in nanoscale lithography. In both fields, there is increasing demand for a cost-effective lithographic technique that can produce large fields (to -45 cm diagonal for displays) of nanoscale structures. Imaging optical lithographic techniques are approaching fundamental limits in resolution. Interferometric lithography, in contrast provides a very simple and inexpensive technique that features essentially unlimited depth-of-field patterns with critical dimensions (CD) as small as /spl Lambda//4 over very huge areas.