Title :
Optical response of the GaAs MESFET at microwave frequencies and applications
Author :
Paolella, A. ; Herczfeld, P.R. ; Madjar, A. ; Higgins, T.
Author_Institution :
US Army Labcom, Fort Monmouth, NJ, USA
Abstract :
The authors consider the MESFET as an optical port on MMICs (monolithic microwave integrated circuits). It is shown quantitatively how better optical coupling improves the photoresponse of the MESFET. It is pointed out that by modest redesign its frequency response can be significantly extended up to 10 GHz. How these can be converted to better optical control of MMIC circuits is demonstrated. A direct optical injection locking of a MESFET oscillator was performed. The measured optical injection locking bandwidth was 43.8 MHz.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave oscillators; optoelectronic devices; 10 GHz; 438 MHz; GaAs; MESFET; MMICs; direct optical injection locking; frequency response; microwave frequencies; monolithic microwave integrated circuits; optical control; optical coupling; optical injection locking bandwidth; optical port; oscillator injection locking; photoresponse; semiconductors; Gallium arsenide; Injection-locked oscillators; Integrated optics; MESFET integrated circuits; MMICs; Microwave frequencies; Microwave integrated circuits; Monolithic integrated circuits; Optical coupling; Photonic integrated circuits;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147043
