Optical response of the GaAs MESFET at microwave frequencies and applications

Author

Paolella, A. ; Herczfeld, P.R. ; Madjar, A. ; Higgins, T.

Author_Institution

US Army Labcom, Fort Monmouth, NJ, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

487

Abstract

The authors consider the MESFET as an optical port on MMICs (monolithic microwave integrated circuits). It is shown quantitatively how better optical coupling improves the photoresponse of the MESFET. It is pointed out that by modest redesign its frequency response can be significantly extended up to 10 GHz. How these can be converted to better optical control of MMIC circuits is demonstrated. A direct optical injection locking of a MESFET oscillator was performed. The measured optical injection locking bandwidth was 43.8 MHz.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave oscillators; optoelectronic devices; 10 GHz; 438 MHz; GaAs; MESFET; MMICs; direct optical injection locking; frequency response; microwave frequencies; monolithic microwave integrated circuits; optical control; optical coupling; optical injection locking bandwidth; optical port; oscillator injection locking; photoresponse; semiconductors; Gallium arsenide; Injection-locked oscillators; Integrated optics; MESFET integrated circuits; MMICs; Microwave frequencies; Microwave integrated circuits; Monolithic integrated circuits; Optical coupling; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147043

Filename

147043