Title :
Theory and experiment for the HEMTs under optical illumination
Author :
Romero, M.A. ; Cunha, A.L.A. ; de Salles, A.A.A.
Author_Institution :
CETUC, Rio de Janeiro, Brazil
Abstract :
Theoretical and experimental investigations of the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs (high electron mobility transistors) under optical illumination are presented. The photoconductive effect which increases the two-dimensional electron gas (2-DEG) channel electron concentration and the photovoltaic effect in the gate junction are considered. The optical tuning of a 2-GHz HEMT oscillator and the optical control of the gain of a 2-6 GHz HEMT amplifier are presented, and potential applications are described.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gain control; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave amplifiers; microwave oscillators; tuning; 2 to 6 GHz; Al/sub 0.3/Ga/sub 0.7/As-GaAs; DC performance; HEMTs; RF performance; amplifier; applications; depletion mode transistors; experimental investigations; high electron mobility transistors; optical control; optical illumination; optical tuning; oscillator; photoconductive effect; photovoltaic effect; semiconductors; Electron optics; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical tuning; Photoconductivity; Photovoltaic effects; Radio frequency; Stimulated emission;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147045
