A highly compact, wideband GaAs MESFET X-Ku band receiver MMIC

Author

Aust, M.V. ; Ton, T.N. ; Yonaki, J. ; Dow, G.S. ; Lin, T.S. ; Yang, D.C. ; Andrews, S.S.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

529

Abstract

A fully integrated MMIC (microwave monolithic integrated circuit) receiver was designed and fabricated using the ion-implanted GaAs MESFET 0.5 mu m process. This MMIC receiver incorporates a two-stage RF amplifier, a two-stage LO (local oscillator) amplifier, an IF (intermediate frequency) amplifier, and a singly balanced diode mixer. Better than 10 dB conversion gain is achieved from 9 to 20 GHz. The LO to IF isolation is better than 30 dB. This chip operates from a single +5 VDC and draws 175 mA. Total chip size is 3.5 mm*3.0 mm.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; mixers (circuits); radiofrequency amplifiers; superheterodyne receivers; 0.5 micron; 10 dB; 175 mA; 3.0 to 3.5 mm; 30 dB; 5 V; 9 to 20 GHz; GaAs; MESFET; MMIC receiver; balanced diode mixer; chip size; conversion gain; intermediate frequency; isolation; local oscillator; microwave monolithic integrated circuit; receiver MMIC; semiconductors; two-stage RF amplifier; Broadband amplifiers; Diodes; Frequency; Gallium arsenide; Local oscillators; MESFET integrated circuits; MMICs; Monolithic integrated circuits; Radiofrequency amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147054

Filename

147054