Temporally and spatially resolved emission studies of GaAs/AlGaAs laser diode arrays mounted on different heat sinks

Author

Voss, M. ; Lier, C. ; Menzel, U. ; Barwolff, A. ; Elsaesser, Thomas

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

416

Abstract

Summary form only given. Laser diodes with output powers of several watts represent key elements of modern all-solid laser technology. In this paper we present a systematic study of the emission of high-power laser arrays in a time range from 10 ns up to cw operation. We identify three different regimes of device heating in time and demonstrate strong shifts of the emission wavelength depending on the specific heat-sink configuration. The investigated double quantum well GRINSCH structure had a resonator length of 600 /spl mu/m and reflectivities of the facets 5% and 95%.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; heat sinks; high-speed optical techniques; laser cavity resonators; laser variables measurement; quantum well lasers; reflectivity; semiconductor laser arrays; 10 ns; 600 mum; GaAs-AlGaAs; GaAs-AlGaAs laser diode arrays; all-solid laser technology; cw operation; device heating; double quantum well GRINSCH structure; emission wavelength; facets; heat sinks; high-power laser arrays; laser variables measurement; output powers; resonator length; spatially resolved emission studies; specific heat-sink configuration; strong shifts; temporally resolved emission studies; time range; Diode lasers; Gallium arsenide; Heat sinks; Laser modes; Optical arrays; Power generation; Power lasers; Quantum well lasers; Semiconductor laser arrays; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864861