Impact of the residual facet reflectivity on beam profile filamentation in semiconductor laser amplifiers

Author

Zheng Dai ; Michalzik, Rainer ; Unger, P. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1996

fDate

2-7 June 1996

Firstpage

416

Lastpage

417

Abstract

Summary form only given. In this paper we elaborately apply the beam propagation method (BPM) to allow for the more appropriate superposition of the optical fields in the InGaAs-GaAs QW active semiconductor laser amplifer device. With the inclusion of the lateral phase variations we are able to study the impacts of residual facet reflectivities on the performance characteristics of traveling wave amplifiers in detail.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser theory; laser variables measurement; quantum well lasers; reflectivity; semiconductor device models; InGaAs-GaAs; InGaAs-GaAs QW active semiconductor laser amplifer device; beam propagation method; laser beam profile filamentation; lateral phase variations; optical field superposition; residual facet reflectivity; semiconductor laser amplifiers; traveling wave amplifiers; Apertures; Delay effects; Laser beams; Propagation delay; Reflectivity; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864862